CXMT says it plans to launch 4F²-based DDR5 RDIMM by year-end, potentially two years ahead of Samsung

Chinese memory maker ChangXin Memory Technologies, or CXMT, has outlined a new DRAM roadmap that points to a year-end launch for a next-generation DDR5 RDIMM server memory product. Speaking at the fourth Integrated Chip and Chiplet Conference in Shanghai, company president Dr. Cao Kanyu said the product is expected to combine several advanced technologies, including a 4F² memory cell architecture and hybrid bonding. The report, citing Wccftech and Samsung’s 4F² roadmap, said CXMT could reach the market roughly two years before Samsung if it stays on schedule, as Samsung is said to be targeting 2028 for its own 4F² introduction. The article also explains why 4F² matters: compared with the mainstream 6F² DRAM cell, it can reduce cell area by about one-third and theoretically raise density by around 30% to 50% under the same feature size. At the same time, Wccftech cautioned that CXMT’s first product may be a derivative built on a 15 nm-class G5 process rather than a full 4F² implementation. The report also highlighted CXMT’s capacity expansion, its use of high-k metal gate technology in G4 DRAM and LPDDR5X, and market attention on yield, mass production timing, and server customer qualification.